Influence of Dimensionality on Thermoelectric Device Performance

The role of dimensionality on the electronic performance of thermoelectric devices is clarified using the Landauer formalism, which shows that the thermoelectric coefficients are related to the transmission, T(E), and how the conducing channels, M(E), are distributed in energy. The Landauer formalism applies from the ballistic to diffusive limits and provides a clear way to compare performance in different dimensions. It also provides a physical interpretation of the "transport distribution," a quantity that arises in the Boltzmann transport equation approach. Quantitative comparison of thermoelectric coefficients in one, two, and three dimension shows that the channels may be utilized more effectively in lower-dimensions. To realize the advantage of lower dimensionality, however, the packing density must be very high, so the thicknesses of the quantum wells or wires must be small. The potential benefits of engineering M(E) into a delta-function are also investigated. When compared to a bulk semiconductor, we find the potential for ~50 % improvement in performance. The shape of M(E) improves as dimensionality decreases, but lower dimensionality itself does not guarantee better performance because it is controlled by both the shape and the magnitude of M(E). The benefits of engineering the shape of M(E) appear to be modest, but approaches to increase the magnitude of M(E) could pay large dividends.Comment: 23 pages, 5 figure

Design of testbed and emulation tools

The research summarized was concerned with the design of testbed and emulation tools suitable to assist in projecting, with reasonable accuracy, the expected performance of highly concurrent computing systems on large, complete applications. Such testbed and emulation tools are intended for the eventual use of those exploring new concurrent system architectures and organizations, either as users or as designers of such systems. While a range of alternatives was considered, a software based set of hierarchical tools was chosen to provide maximum flexibility, to ease in moving to new computers as technology improves and to take advantage of the inherent reliability and availability of commercially available computing systems

Current status of one- and two-dimensional numerical models: Successes and limitations

The capabilities of one and two-dimensional numerical solar cell modeling programs (SCAP1D and SCAP2D) are described. The occasions when a two-dimensional model is required are discussed. The application of the models to design, analysis, and prediction are presented along with a discussion of problem areas for solar cell modeling

Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

We apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of scattering using a simple approximation inspired by Bu ̈ttiker. It is based on an expansion of the device Hamiltonian in coupled mode space. Simulation results are used to highlight quantum effects and discuss the importance of scattering when examining the transport properties of nanoscale transistors with differing channel access geometries. Additionally, an efficient domain decomposition scheme for evaluating the performance of nanoscale transistors is also presented. This article highlights the importance of scattering in understanding the performance of transistors with different channel access geometries

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.Comment: 13 pages, 4 figure

Ballisticity of nanotube FETs: Role of phonon energy and gate bias

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.Comment: 16 pages, 1 table, 4 figure

FISH1D 2.1 User’s Manual

FISH1D is a computer program that solves the one-dimensional Poisson equation for electrostatic Fields In Semiconductor Heterostructures. The program will print or plot the electrostatic potential, electric field, electron and hole densities, dopant density, ionized dopant density, and other quantities of interest versus position at an applied bias voltage (assuming zero current). A capacitance or sheet carrier concentration versus voltage analysis may also be performed. While FISH1D was originally written for the ternary AlxGa1_xAs, it has been modified to simulate CdxHg1_xTe, ZnSe, GexSi1_x, and Si as well, and the program can be readily modified to analyze other semiconductors through the addition of new material subroutines or using the most recent option, the MATDEF card. This card enables the user to enter new material definitions by layers in the input deck without having to recompile, an advantage of FISH1D 2.1 over FISH1D 2.0. The primary purpose of this document is explain how to use FISH1D; for a more thorough discussion of the numerical implementation of FISH1D, the user is directed to the references. A theoretical basis for FISH1D is provided in Appendix I of this manual. The development of FISH1D was supported by the Semiconductor Research Corporation, the National Science Foundation Materials Research Laboratory, and by the Eastman Kodak Company

Importance of Space-Charge Effects in Resonant Tunneling Devices

The consideration of space charge in the analysis of resonant tunneling devices leads to a substantial modification of the current-voltage relationship. The region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis. Moreover, the peak value of current prior to NDR is reduced, leading to a reduction in the predicted peak-to-valley ratio. An approach is presented to include space-charge effects, and a recently fabricated GaAs-Alx Gal _ x As structure is analyzed, to underscore the importance of a self-consistent electrostatic potential in theoretical calculations